1 d a t a s h e e t : c s d 2 0 0 6 0 d r e v . q CSD20060D Csilicon carbide schottky diode z ero r ecovery ? r ectifier features ? 600-volt schottky rectifer ? zero reverse recovery current ? zero forward recovery voltage ? high-frequency operation ? temperature-independent switching behavior ? extremely fast switching ? positive temperature coeffcient on v f benefts ? replace bipolar with unipolar rectifers ? essentially no switching losses ? higher effciency ? reduction of heat sink requirements ? parallel devices without thermal runaway applications ? switch mode power supplies ? power factor correction - typical pfc p out : 2000w-4000w ? motor drives - typical power : 5hp-10hp package to-247-3 maximum ratings symbol parameter value unit test conditions note v rrm repetitive peak reverse voltage 600 v v rsm surge peak reverse voltage 600 v v dc dc blocking voltage 600 v i f(avg) average forward current (per leg/device) 10/20 16.5/33 a t c =150?c t c =125?c i f(peak) peak forward current 25/50 a t c =125?, t rep <1 ms, duty=0.5 i frm repetitive peak forward surge current (per leg/device) 43/86 29/58 a t c =25?c, t p =10 ms, half sine wave t c =125?c, t p =10 ms, half sine wave i fsm non-repetitive peak forward surge current (per leg) 77 a t c =25?c, t p =1.5 ms, half sine wave i fsm non-repetitive peak forward surge current (per leg/device) 250/500 a t c =25?c, t p =10 s, pulse p tot power dissipation (per leg) 138 46 w t c =25?c t c =125?c t j , t stg operating junction and storage temperature -55 to +175 ?c to-247 mounting torque 1 8.8 nm lbf-in m3 screw 6-32 screw part number package marking CSD20060D to-247-3 csd20060 v rrm = 600 v i f(avg) = 20 a q c = 56 nc subject to change without notice. www.cree.com/power
2 CSD20060D rev. q electrical characteristics (per leg) symbol parameter typ. max. unit test conditions note v f forward voltage 1.5 2.0 1.8 2.4 v i f = 10 a t j =25c i f = 10 a t j =175c i r reverse current 50 100 200 1000 a v r = 600 v t j =25c v r = 600 v t j =175c q c total capacitive charge 28 nc v r = 600 v, i f = 10 a d i /d t = 500 a/s t j = 25c c total capacitance 550 65 50 pf v r = 0 v, t j = 25c, f = 1 mhz v r = 200 v, t j = 25?c, f = 1 mhz v r = 400 v, t j = 25?c, f = 1 mhz note: 1. this is a majority carrier diode, so there is no reverse recovery charge. thermal characteristics symbol parameter typ. unit r jc thermal resistance from junction to case 1.08 ** 0.54 * c/w ** per leg, * both legs typical performance (per leg) figure 1. forward characteristics figure 2. reverse characteristics v r reverse voltage (v ) i r 5uvuuqw 200 180 160 140 120 100 80 60 40 20 0 0 100 200 300 400 500 600 700 v f forward voltage (v ) i f forward current (a) 20 18 16 14 12 10 8 6 4 2 0 0 1.0 2.0 3.0 4.0
3 CSD20060D rev. q figure 3. current derating figure 4. capacitance vs. reverse voltage figure 5. transient thermal impedance typical performance (per leg) c u r r e n t d e r a t i n g 0 . 0 5 . 0 1 0 . 0 1 5 . 0 2 0 . 0 2 5 . 0 3 0 . 0 3 5 . 0 4 0 . 0 4 5 . 0 5 0 . 0 5 5 . 0 6 0 . 0 6 5 . 0 7 0 . 0 7 5 . 0 8 0 . 0 8 5 . 0 9 0 . 0 9 5 . 0 1 0 0 . 0 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 1 7 5 2 0 0 c a s e t e m p e ra t u re p e a k f o r w a r d c u r r e n t d c 7 0 % d u t y 5 0 % d u t y 3 0 % d u t y 1 0 % d u t y 100 90 80 70 60 50 40 30 20 10 0 25 50 75 100 125 150 175 200 i f(peak) peak forward current (a) 10% duty* 30% duty* 50% duty* 70% duty* dc t c case temperature ( c ) * frequency > 1khz 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.e-07 1.e-06 1.e-05 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 tim e (s) zth (c/w) v r reverse voltage (v ) c capacitance (pf) 400 350 300 250 200 150 100 50 0 1 10 100 1000
4 CSD20060D rev. q typical performance (per leg) 140 120 100 80 60 40 20 0 power dissipation (w) t c case temperature ( c ) 25 50 75 100 125 150 175 figure 6. power derating 0.000 20.000 40.000 60.000 80.000 100.000 120.000 140.000 25 50 75 100 125 150 175
5 CSD20060D rev. q package dimensions package to-247-3 pos inches millimeters min max min max a .605 .631 15.367 16.027 b .800 .830 20.320 21.082 c .789 .800 20.05 20.31 d .095 .126 2.413 3.200 e .046 .052 1.168 1.321 f .060 .084 1.524 2.134 g .215 typ .215 typ h .180 .203 4.572 5.156 j .078 .081 1.982 2.057 k 6? 21? 6? 21? l 4? 6? 4? 6? m 2? 4? 2? 4? n 2? 4? 2? 4? p .090 .097 2.286 2.464 q .020 .030 .508 .762 r 9? 11? 9? 11? s 9? 11? 9? 11? t 2? 8? 2? 8? u 2? 8? 2? 8? v .138 .144 3.505 3.658 w .210 .220 5.334 5.588 x .502 .557 12.751 14.148 y .637 .695 16.180 17.653 z .040 .052 1.016 1.321 aa .032 .046 .813 1.168 bb .110 .140 2.794 3.556 w x y z aa bb
6 6 CSD20060D rev. q this product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defbrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffc control systems, or weapons systems. copyright ? 2006-2009 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree, the cree logo, and zero recovery are registered trademarks of cree, inc. cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.313.5451 www.cree.com/power recommended solder pad layout part number package marking CSD20060D to-247-3 csd20060 the levels of environmentally sensitive, persistent biologically toxic (pbt), persistent organic pollutants (pop), or otherwise restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with eu directive 2002/95/ec on the restriction of the use of certain hazardous substances in electrical and electronic equipment (rohs), as amended through april 21, 2006. this part number was released previously with sn/pb solder plating as a standard industry fnish. for more information please contact power_sales@cree.com to-247-3 .12 .2 .2 .08 diode model note: t j = diode junction temperature in degrees celcius v t r t diode model csd20060 per leg vf t = v t + if*r t v t= 0.92 + (t j * - 1.35*10 - 3 ) r t= 0.052 + (t j * 0.29*10 - 3 )
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